JOURNAL ARTICLES 

[1] H. Hakan Gürel, Ö. Akıncı and H. Ünlü, "Semiempirical tight binding modelling of III-N based heterostructures",  in Superlattices and Microstructures, 40,  pp 588-692 (2006).

[2] Ö. Akıncı, H. H. Gürel and H. Ünlü, "Semiempirical tight binding modeling of Cd based II-VI heterostructures for solar cells " in Thin Solid Films, 511, pp 684-689 (2006).

[3] H. Hakan Gürel, Ö. Akıncı and H. Ünlü, "Tight Binding Modelling of Band Offsets in Nanoscale Heterostructures, in Computational Materials Science, 33, pp 269-275,  (2005).

[4] Ö. Akıncı, H. H. Gürel and H. Ünlü, "Modelling of bandgap and band offset properties of III-N related Heteorstructures, in Superlattices and Microstructures, 36,  pp 685-692 (2004).

[5] H. Hakan Gürel, Ö. Akıncı and H. Ünlü, (Invited) "Modeling of Heterostructures for Nanoelectronic Devices;  A Tight Binding View, pp1-20, Vol 1,  Sigma: Journal of Engineering and Natural Sciences , YTÜ Yayınları, (2004).

[6] H. Ünlü, "Tight Binding Modelling of Band Offsets in GaN and ZnSe Based Heterostructures", Physica Status Solidi, B-235,  pp. 248-253 (2003).

[7] H. Ünlü, "Pressure Effects on Bonding and Interface Properties of GaN Based Heterostructures", J. of High Pressure Research, 22, 287-292 (2002).

[8] H. Ünlü, "Band Offsets in II-VI Heterostructures", Physica Status Solidi ( B)  229 (1), pp 581-585 (2002).

[9] H. Ünlü and A. Asenov, "Band Offsets in III-Nitride Heterostructures", J. Phys. D: Appl. Phys. 35, pp 591-594 (2002). 

[10] H. Ünlü, "Modelling of Heterojunction Bipolar Transistors as a function of Temperature, Pressure, Strain and Composition" Computational Materials Science, 21, pp 45-474 (2001).

[11] H. Ünlü, "Tight Binding Modeling of Heterojunction Band Offsets as a Function of Pressure and Composition", Physica Status Solidi ( B),  223 (1), pp 195-204 (2001).

[12] H. Ünlü, "Modeling of Current Transport and 1/F Noise in Heterojunction Bipolar Transistors", Journal of Microelectronics Reliability ,. 40 (11), pp 1791-1798 (2000)

[13] H. Ünlü, "Extended Tight Binding and Thermochemical Modeling of III-Nitride Heterostructures as a Function of Temperature, Strain, and Pressure", Physica Status Solidi (B),. 219 (1), pp 107-111 (1999).

[14] H. Ünlü, "A Quantum Thermochemical Modeling of Band Offsets and Schottky Barriers of Semiconductor Heterostructures", Romainan Journal of Information Science and Technology, .2, Number 1-2, pp 189 - 210 (1999).

[15] H. Ünlü, "Carrier Transport and Band Offsets in Two Dimensional Heterostructures", Tr. J. of Physics, . 23, pp 819-824 (1999).

[16] H. Ünlü, "A Thermodynamic Model for Determining Pressure and Temperature Effects on the Bandgap Energies and Other Properties of Some Semiconductors," Solid State Electronics, 35, pp. 1343-1352 (1992).

[17] H. Ünlü and H. Morkoç, (invited) "Strained Layer (In,Ga)As/(Al,Ga)As Quantum Wells for Ultrahigh Frequency MODFETs," Solid State Technology , Vol. 31, pp. 83-87 (1988).

[18] H. Morkoç, H. Ünlü, H. Zabel, and N. Otsuka, (invited) "Gallium Arsenide on Silicon : A Review," Solid State Technology, . 31, pp. 71-76 (1988).

[19] N. Lucas, H. Zabel, H. Morkoç, and H. Ünlü, "Anisotropy of Thermal Expansion of GaAs on Si," Applied Physics Letters,. 52 , pp. 2117-2119 (1988).

[20] M.S. Ünlü, G. Munns, J. Chen, T. Won, H. Ünlü, and H. Morkoç, G. Radhakrishnan, J. Katz, and D. Verret "Characteristics of annealed P/N Junction between GaAs and Si(100)," Applied Physics Letters, 51 , pp. 1995-1997 (1987).

[21] T. Won, M.S. Ünlü, G. Munns, H. Ünlü, J. Chyi, and H. Morkoç, "Characterization of P-GaAs/n-Si (100) Heterojunction Grown by MBE," Journal of Applied Physics,. 62, pp. 3860-3865 (1987).

[22] G. Ji, D. Huang, U.K. Reddy, H. Ünlü, T. Henderson, and H. Morkoç, "Determination of Band Offsets in (Al,Ga)As/GaAs and (In,Ga)As/GaAs Multiple Quantum Wells," Journal of Vacuum Science and Technology, .B 5, pp. 1346-1352 (1987).

[23] H. Ünlü and A. Nussbaum, "A Review of Models for Heterojunction Band Offsets," in Special Issue on New developments in the Physics of Homo-and Heterojunctions, Solid State Electronics, 30, pp. 1095-1098 (1987).

[24] H. Ünlü and A. Nussbaum, "Heterojunction Band Discontinuities," Physics Status Solidi (A). 95, pp. 687-692 (1986).

[25] H. Ünlü and A. Nussbaum, "Heterojunction Band Offsets as a Device Design Parameter," in Special Issue on Heterojunction Field Effect Transistors, IEEE Trans. on Electron Devices,. ED-33, pp. 616-619 (1986)